Powered by the company’s fifth-generation V-NAND, the new Universal Flash Storage offers 20x more storage than a 64GB internal memory and 10x the speed of a typical microSD card for data-intensive applications



Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”

Within the same package size (11.5mm x 13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version by combining 16 stacked layers of Samsung’s most advanced 512-gigabit (Gb) V-NAND flash memory and a newly developed proprietary controller. Smartphone users will now be able to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS also possesses exceptional speed, allowing users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000 megabytes per second (MB/s), the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in as fast as five seconds, which is 10 times the speed of a typical microSD card. Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.


* Reference: Comparison of Internal Memory Performance

Memory	Sequential Read Speed	Sequential Write Speed	Random Read Speed	Random Write Speed
Samsung 1TB eUFS 2.1 (Jan. 2019)	1000 MB/s	260 MB/s	58,000 IOPS	50,000 IOPS
Samsung 512GB eUFS 2.1 (Nov. 2017)	860 MB/s	255 MB/s	42,000 IOPS	40,000 IOPS
Samsung eUFS 2.1 for automotive (Sept. 2017)	850 MB/s	150 MB/s	45,000 IOPS	32,000 IOPS
Samsung 256GB UFS Card (July 2016)	530 MB/s	170 MB/s	40,000 IOPS	35,000 IOPS
Samsung 256GB eUFS 2.0 (Feb. 2016)	850 MB/s	260 MB/s	45,000 IOPS	40,000 IOPS
Samsung 128GB eUFS 2.0 (Jan. 2015)	350 MB/s	150 MB/s	19,000 IOPS	14,000 IOPS
eMMC 5.1	250 MB/s	125 MB/s	11,000 IOPS	13,000 IOPS
eMMC 5.0	250 MB/s	90 MB/s	7,000 IOPS	13,000 IOPS
eMMC 4.5	140 MB/s	50 MB/s	7,000 IOPS	2,000 IOPS

Source: https://news.samsung.com/global/sams...-flash-storage

Posted By: Brink
30 Jan 2019